Moving Front Fixing in Thin Film Laser Annealing

[+] Author and Article Information
C. P. Grigoropoulos

Department of Mechanical Engineering, University of California, Berkeley, CA 94720

W. E. Dutcher

Department of Mechanical Engineering, University of Washington, Seattle, WA 98195

J. Heat Transfer 114(1), 271-277 (Feb 01, 1992) (7 pages) doi:10.1115/1.2911257 History: Received November 19, 1990; Revised July 01, 1991; Online May 23, 2008


The process of laser melting and recrystallization of thin silicon films, which are deposited on amorphous substrates, is capable of improving the semiconductor electrical and crystalline properties. The process is controlled by the intensity of the laser beam, the material translation speed, and the thermal and radiative properties of the semiconductor layer and the encapsulating structure. Accurate theoretical modeling of the associated phase change process is essential for optimal material processing. This paper presents a numerical model implementing a front-fixing approach and body-fitted curvilinear grids to analyze the heat transfer and the induced crystallization rates in thin film laser annealing. The results are compared to experimental data and reasonable agreement is obtained. Further improvements depend upon knowledge of thin film thermal and optical properties.

Copyright © 1992 by The American Society of Mechanical Engineers
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