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RESEARCH PAPERS: Heat Conduction

Transient Temperature During Pulsed Excimer Laser Heating of Thin Polysilicon Films Obtained by Optical Reflectivity Measurement

[+] Author and Article Information
X. Xu, C. P. Grigoropoulos

Department of Mechanical Engineering, University of California, Berkeley, CA 94720

R. E. Russo

Energy and Environment Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720

J. Heat Transfer 117(1), 17-24 (Feb 01, 1995) (8 pages) doi:10.1115/1.2822301 History: Received May 01, 1993; Revised May 01, 1994; Online December 05, 2007

Abstract

The transient reflectivity of a continuous wave (CW) HeNe laser was measured during the pulsed excimer laser heating of thin polysilicon films at the nanosecond time scale. Polysilicon films with thicknesses from 0.1 to 0.4 μm were deposited by Low-Pressure Chemical Vapor Deposition (LPCVD) on thermally oxidized crystalline silicon wafers. The complex refractive index of these films at the HeNe laser wavelength (λprobe = 0.6328 μm) was measured in the temperature range from 300 K to approximately 1400 K by combined ellipsometric and normal incidence reflectivity measurements. Numerical heat transfer and optical reflectivity analysis based on the measured optical properties of polysilicon films were conducted. The calculated reflectivity histories were compared with the experimental results to reveal the transient temperature field.

Copyright © 1995 by The American Society of Mechanical Engineers
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