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RESEARCH PAPERS: Melting and Solidification

Heat Transfer in Excimer Laser Melting of Thin Polysilicon Layers

[+] Author and Article Information
X. Xu, C. P. Grigoropoulos

Department of Mechanical Engineering, University of California, Berkeley, CA 94720

R. E. Russo

Energy and Environmental Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720

J. Heat Transfer 117(3), 708-715 (Aug 01, 1995) (8 pages) doi:10.1115/1.2822634 History: Received October 01, 1993; Revised May 01, 1994; Online December 05, 2007

Abstract

A pulsed KrF excimer laser with nanosecond pulse duration is used for surface melting of thin polycrystalline silicon films. The velocity of the moving phase boundary during melting and solidification, the maximum melting depth, as well as the melting duration are experimentally determined by combined optical and electrical methods. A melting interface tracking model is used to calculate the melt front propagation and the transient temperature field in the semiconductor. A phase-change model, which allows the occurrence of melting and solidification at temperatures other than the equilibrium melting temperature, is employed in the numerical calculation. The effect of interfacial superheating/undercooling is discussed.

Copyright © 1995 by The American Society of Mechanical Engineers
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