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RESEARCH PAPERS: Analytical and Experimental Techniques

Short-Time-Scale Thermal Mapping of Microdevices Using a Scanning Thermoreflectance Technique

[+] Author and Article Information
Y. S. Ju, K. E. Goodson

Department of Mechanical Engineering, Stanford University, CA 94305-3030

J. Heat Transfer 120(2), 306-313 (May 01, 1998) (8 pages) doi:10.1115/1.2824246 History: Received April 21, 1997; Revised January 23, 1998; Online December 05, 2007

Abstract

The performance and reliability of microdevices can be strongly influenced by the peak temperature rise and spatial temperature distribution during brief electrical overstress (EOS) phenomena, which can occur at sub-microsecond time scales. The present study investigates short-time-scale laser reflectance thermometry of micro devices by examining the impact of passivation overlayers on the thermoreflectance signal and by demonstrating a calibration method suitable for metallization. This manuscript also describes a scanning laser thermometry facility that captures temperature fields in microdevices with 10 ns temporal resolution and 1 μm spatial resolution. The facility combines scanning laser optics with electrical stressing capability to allow simultaneous interrogation of the thermal and electrical behavior of devices. Data show the transient temperature distribution along the drift region of silicon-on-insulator (SOI) power transistors and along metal interconnects subjected to brief electrical stresses. The theory and experimental capability developed in this study are useful for studying short-time-scale thermal phenomena in microdevices and verifying models employed for their simulation.

Copyright © 1998 by The American Society of Mechanical Engineers
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