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RESEARCH PAPERS: Featured Section—Heat Transfer in Manufacturing

Diameter-Controlled Czochralski Growth of Silicon Crystals

[+] Author and Article Information
H. Zhang, V. Prasad

Department of Mechanical Engineering, State University of New York, Stony Brook, NY 11794-2300

L. L. Zheng, D. J. Larson

Department of Materials Science and Engineering, State University of New York, Stony Brook, NY 11794-2275

J. Heat Transfer 120(4), 874-882 (Nov 01, 1998) (9 pages) doi:10.1115/1.2825906 History: Received November 03, 1997; Revised August 18, 1998; Online December 05, 2007

Abstract

A thermal-capillary dynamic model for Czochralski (Cz ) growth of silicon single crystal is presented that accounts for convection in the melt, conduction in the crystal, and radiation from the melt free surface and crystal. The shapes of the crystal/melt interface, moving crystal, and free surface are governed by the balance of energy and stresses. Decrease of the melt volume as the crystal is grown is also considered. A control algorithm based on the adjustment of the pull rate and/or crucible wall temperature has been developed. The diameter of the crystal can remain constant or vary with time based on the strategies implemented to control the growth process.

Copyright © 1998 by The American Society of Mechanical Engineers
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