0
TECHNICAL BRIEFS

Effect of Buoyancy, Susceptor Motion, and Conjugate Transport in Chemical Vapor Deposition Systems

[+] Author and Article Information
W. K. S. Chiu

Department of Mechanical and Aerospace Engineering, Rutgers University, New Brunswick, NJ 08903

Y. Jaluria

Department of Mechanical and Aerospace Engineering, Rutgers University, 98 Brett Road, Piscataway, NJ 08854-8058

J. Heat Transfer 121(3), 757-761 (Aug 01, 1999) (5 pages) doi:10.1115/1.2826049 History: Received April 06, 1998; Revised February 12, 1999; Online December 05, 2007

Abstract

The fluid flow and heat transfer in the chemical vapor deposition (CVD) manufacturing process are studied numerically. Several crucial aspects such as thermal buoyancy, continuous processing, and conjugate transport are considered. For each aspect, the predicted heat transfer rate and the susceptor temperature are computed and qualitatively linked with the rate and uniformity of film deposition. It is shown that buoyancy effects in helium carrier gas commonly used in diffusion-limited CVD has a negligible effect on deposition rates. Susceptor motion is shown as a feasible alternative to improving the productivity. Conjugate heat transfer effects that arise demonstrate that reactor wall thickness and material may be judiciously chosen to improve temperature uniformity and enhance heat transfer rates, thereby improving deposition rate, film uniformity, and quality.

Copyright © 1999 by The American Society of Mechanical Engineers
Your Session has timed out. Please sign back in to continue.

References

Figures

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In