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TECHNICAL PAPERS: Heat Transfer in Manufacturing

Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide Crystals

[+] Author and Article Information
Q.-S. Chen, H. Zhang, V. Prasad

Department of Mechanical Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794-2300e-mail: prasad@pml.eng.sunysb.edu

C. M. Balkas, N. K. Yushin

Sterling Semiconductor, Inc., Sterling, VA 20166

J. Heat Transfer 123(6), 1098-1109 (Apr 09, 2001) (12 pages) doi:10.1115/1.1409263 History: Received January 16, 2001; Revised April 09, 2001
Copyright © 2001 by ASME
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References

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Figures

Grahic Jump Location
(a) Schematic of a RF heated furnace for PVT growth of single SiC crystals and key physical phenomena associated with the process; and (b) geometry of a SiC growth system with 5 turns of coil
Grahic Jump Location
(a) Heat flux on the radiation surface and curvilinear grid system; and (b) schematic of ring elements on radiative surfaces. The ring elements coincide with the finite volume grids for conduction calculation.
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(a) Curvilinear finite-volume grids; and (b) computational grids for finite volume method. Grids are highly clustered in the regions of large temperature gradients.
Grahic Jump Location
Contours of magnetic potential, (A0)real, in the growth system for a current of 1200 A and a frequency of 10 kHz
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Generated heat power, qeddy, along the radial direction at different heights z=0,1.3 Rs, and 2.6 Rs. The profile at z=1.3 Rs has an inert gas gap between the powder charge and the susceptor.
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Temperature distribution for a current of 1200 A with argon pressure of 26,666 Pa
Grahic Jump Location
Temperature profiles along (a) radial direction at z=2.3 Rs, and (b) axial direction at r=0, when t=0.5, 1, 2, 3, 4 and 5 h. The current is maintained at 1200 A with a frequency of 10 kHz and pressure of 10−3 Pa for t<0.5 h and 105 Pa for t>0.5 h.
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Evolution of temperatures of the charge and the seed and Tbottom with time during the heating process as in Fig. 7
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Predicted growth rate along the seed surface for different inert gas pressures for the conditions as in Fig. 6
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Temperature distributions for different currents, (a) I=1000 A, and (b) I=1100 A
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Dependence of the growth rate on the temperature of the seed surface, Tseed, and the temperature on the bottom of the crucible, Tbottom. The symbols from top to bottom correspond to the currents of 1200 A, 1100 A and 1000 A, respectively, with argon pressure of 26,666 Pa.
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Temperature distributions for different coil positions. The coil is moved upward (a) zcoil=0, (b) 0.01 m, and (c) 0.02 m, respectively. The coil position in (a) is the same as that in Fig. 6. The temperature on top of the crucible is kept at 2400 K for all the cases.
Grahic Jump Location
Dependence of growth rate, GSiC, on the temperature difference between the charge and seed, Tcharge−Tseed, and on the temperature difference between the bottom and top of the crucible, Tbottom−Ttop. The coil positions, zcoil, are denoted besides the symbols on the curve of GSiC∼Tbottom−Ttop. The temperature on top of the crucible, Ttop, is kept at 2400 K or 2300 K with argon pressure of 26,666 Pa.

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