Glass,
R. C., Henshall,
D., Tsvetkov,
V. F., and Carter,
C. H., 1997, “SiC Seeded Crystal Growth,” Phys. Status Solidi B, 202, pp. 149–162.

Pons,
M., Blanquet,
E., Dedulle,
J. M., Garcon,
I., Madar,
R., and Bernard,
C., 1996, “Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals,” J. Electrochem. Soc., 143, No. 11, pp. 3727–3735.

Pons,
M., Blanquet,
E., Dedulle,
J. M., Madar,
R., and Bernard,
C., 1997, “Different Macroscopic Approaches to the Modeling of the Sublimation Growth of SiC Single Crystals,” Mater. Sci. Eng., B, 46, pp. 308–312.

Barrett,
D. L., Seidensticker,
R. G., Gaida,
W., Hopkins,
R. H., and Choyke,
W. J., 1991, “SiC Boule Growth by Sublimation Vapor Transport,” J. Cryst. Growth, 109, pp. 17–23.

Barrett,
D. L., McHugh,
J. P., Hobgood,
H. M., Hopkins,
R. H., McMullin,
P. G., and Clarke,
R. C., 1993, “Growth of Large SiC Single Crystals,” J. Cryst. Growth, 128, pp. 358–362.

Sasaki,
M., Nishio,
Y., Nishina,
S., Nakashima,
S., and Harima,
H., 1998, “Defect Formation Mechanism of Bulk SiC,” Mater. Sci. Forum, 264–268, pp. 41–44.

Lilov,
S. K., 1993, “Study of the Equilibrium Processes in the Gas Phase During Silicon Carbide Sublimation,” Mater. Sci. Eng., B, 21, pp. 65–69.

Tairov,
Yu., M., and Tsvetkov,
V. F., 1978, “Investigation of Growth Processes of Ingots of Silicon Carbide Single Crystals,” J. Cryst. Growth, 43, pp. 209–212.

Tairov,
Yu., M., and Tsvetkov,
V. F., 1981, “General Principles of Growing Large-Size Single Crystals of Various Silicon Carbide Polytypes,” J. Cryst. Growth, 52, pp. 146–150.

Hobgood,
H. M., Barrett,
D. L., McHugh,
J. P., Clarke,
R. C., Sriram,
S., Burk,
A. A., Greggi,
J., Brandt,
C. D., Hopkins,
R. H., and Choyke,
W. J., 1994, “Large Diameter 6H-SiC for Microwave Device Applications,” J. Cryst. Growth, 137, pp. 181–186.

Augustine,
G., Hobgood,
H., Balakrishna,
V., Dunne,
G., and Hopkins,
R. H., 1997, “Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype,” Phys. Status Solidi B, 202, pp. 137–148.

Tsvetkov,
V., Glass,
R., Henshall,
D., Asbury,
D., and Carter,
C. H., 1998, “SiC Seeded Boule Growth,” Mater. Sci. Forum, 264–268, pp. 3–8.

Powell,
A. R., Wang,
S., Fechko,
G., and Brandes,
G. R., 1998, “Sublimation Growth of 50 mm Diameter SiC Wafers,” Mater. Sci. Forum, 264–268, pp. 13–16.

Dhanraj, G., Huang, X. R., Dudley, M., Prasad, V., and Ma, R.-H., 2001, “Silicon Carbide Crystals: Part I–Growth and Characterization,” *Crystal Growth for Modern Technology*, K. Byrappa and T. Ohachi, eds., William Andrew/Noyes Publications, NJ (in press).

Hofmann,
D., Heinze,
M., Winnacker,
A., Durst,
F., Kadinski,
L., Kaufmann,
P., Makarov,
Y., Schäfer,
M., 1995, “On the Sublimation Growth of SiC Bulk Crystals: Development of a Numerical Process Model,” J. Cryst. Growth, 146, pp. 214–219.

Hofmann,
D., Eckstein,
R., Kölbl,
M., Makarov,
Y., Müller,
St. G., Schmitt,
E., Winnacker,
A., Rupp,
R., Stein,
R., and Völkl,
J., 1997, “SiC-bulk growth by Physical-Vapor Transport and Its Global Modeling,” J. Cryst. Growth, 174, pp. 669–674.

Müller,
S. G., Eckstein,
R., Hofmann,
D., Kadinski,
L., Kaufmann,
P., Kölbl,
M., and Schmitt,
E., 1998, “Modeling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification,” Mater. Sci. Forum, 264–268, pp. 57–60.

Ma,
R.-H., Chen,
Q.-S., Zhang,
H., Prasad,
V., Balkas,
C. M., and Yushin,
N. K., 2000, “Modeling of Silicon Carbide Crystal Growth by Physical Vapor Transport Method,” J. Cryst. Growth, 211, pp. 352–359.

Chen,
Q.-S., Zhang,
H., Prasad,
V., Balkas,
C. M., Yushin,
N. K., and Wang,
S., 2001, “Kinetics and Modeling of Sublimation Growth of Silicon Carbide Bulk Crystal,” J. Cryst. Growth, 224, pp. 101–110.

Chen, Q.-S., Prasad, V. Zhang, H., and Dudley, M., 2001, “Silicon Carbide Crystals: Part II—Process Physics and Modeling,” *Crystal Growth for Modern Technology*, K. Byrappa and T. Ohachi, eds., William Andrew/Noyes Publications, NJ, (in press).

Kaldis, E., and Piechotka, M., 1994, “Bulk Crystal Growth by Physical Vapor Transport,” Handbook of Crystal Growth, Vol. 2, D. T. J. Hurle, ed., pp. 615–658.

Chen,
Q.-S., Prasad,
V., and Chatterjee,
A., 1999, “Modeling of Fluid Flow and Heat Transfer in a Hydrothermal Crystal Growth System: Use of Fluid-Superposed Porous Layer Theory,” J. Heat Transfer , 121, pp. 1049–1058.

Chen, Q.-S., Zhang, H., Prasad, V., Balkas, C. M., and Yushin, N. K., 1999, “A System Model for Silicon Carbide Crystal Growth by Physical Vapor Transport Method,” ASME Proc. 33rd National Heat Transfer Conference, HTD, NHTC99-222.

Kraus, J. D., and Carver, K. R., 1973, *Electromagnetics*, McGraw-Hill, New York.

Bı́ró,
O., and Preis,
K., 1989, “On the Use of the Magnetic Vector Potential in the Finite Element Analysis of Three-Dimensional Eddy Currents,” IEEE Trans. Magn., 25, pp. 3145–3159.

Selder,
M., Kadinski,
L., Makarov,
Yu., Durst,
F., Wellmann,
P., Straubinger,
T., Hofmann,
D., Karpov,
S., and Ramm,
M., 2000, “Global Numerical Simulation of Heat and Mass Transfer for SiC Bulk Crystal Growth by PVT,” J. Cryst. Growth, 211, pp. 333–338.

Naraghi,
M. H. N., and Chung,
B. T. F., 1984, “A Stochastic Approach for Analysis of Radiative Heat Transfer in Enclosures with Non-Participating Media,” J. Heat Transfer , 106, pp. 690–698.

Nunes,
E. M., and Naraghi,
M. H. N., 1998, “Numerical Model for Radiative Heat Transfer Analysis in Arbitrarily Shaped Axisymmetric Enclosures with Gaseous Media,” Numer. Heat Transfer, Part A, 33, pp. 495–513.

Zhang,
H., Prasad,
V., and Moallemi,
M. K., 1996, “Numerical Algorithm Using Multizone Adaptive Grid Generation for Multiphase Transport Processes with Moving and Free Boundaries,” Numer. Heat Transfer, Part B, 29, pp. 399–421.

Zhang,
H., and Prasad,
V., 1997, “An Advanced Numerical Scheme for Materials Process Modeling,” Computer Modeling and Simulation in Engineering, 2, pp. 322–343.

Modest,
M. F., 1988, “Radiative Shape Factors between Differential Ring Elements on Concentric Axisymmetric Bodies,” J. Thermophys. Heat Transfer, 2, pp. 86–88.

Siegel, R., and Howell, J. R., 1992, *Thermal Radiation Heat Transfer*, Hemisphere Publishing, Bristol, PA.

Drowart, J., and De Maria, G., 1960, *Silicon Carbide*, Pergamon, Oxford, p. 16.

Kaneko,
T., 1993, “Growth Kinetics of Vapor-grown SiC,” J. Cryst. Growth, 128, pp. 354–357.

Kansa,
E. J., Perlee,
H. E., and Chaiken,
R. F., 1977, “Mathematical Model of Wood Pyrolysis Including Internal Forced Convection,” Combust. Flame, 29, pp. 311–324.

Roy,
A., Mackintosh,
B., Kalejs,
J. P., Chen,
Q.-S., Zhang,
H., and Prasad,
V., 2000, “A Numerical Model for Inductively Heated Cylindrical Silicon Tube Growth System,” J. Cryst. Growth, 211, pp. 365–371.

Anikin,
M., and Madar,
R., 1997, “Temperature Gradient Controlled SiC Crystal Growth,” Mater. Sci. Eng., B46, pp. 278–286.

Balkas,
C. M., Maltsev,
A. A., Roth,
M. D., and Yushin,
N. K., 2000, “Role of Temperature Gradient in Bulk Crystal Growth,” Mater. Sci. Forum, 338–342, pp. 79–82.