Heat Transfer in Nanostructures for Solid-State Energy Conversion

[+] Author and Article Information
G. Chen

Mechanical Engineering Department, Massachusetts Institute of Technology, Cambridge, MA 02139

A. Shakouri

Jack Baskin School of Engineering, University of California, Santa Cruz, CA 95064-1077

J. Heat Transfer 124(2), 242-252 (Nov 20, 2001) (11 pages) doi:10.1115/1.1448331 History: Received July 24, 2001; Revised November 20, 2001
Copyright © 2002 by ASME
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Illustration of thermoelectric devices (a) cooler, (b) power generator, and (c) an actual device
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Comparison of thermoelectric technology with other energy conversion methods for (a) cooling and (b) power generation
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Schematic illustration of the density-of-states of electrons in bulk, quantum well, quantum wire, and quantum dots materials.
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Product of the Seebeck coefficient square and carrier density as a function of the silicon quantum well width 15
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Heterostructure thermionic emission for cooling at room temperatures.
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(a) TEM image of the SiGe/Si superlattice (the dark parts are the 12 nm Si0.75Ge0.25 layers, the light parts are the 3 nm Si layers), and (b) a scanning electron micrograph of a fabricated micro refrigerator
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Cooling measured on 60×60 μm2 SiGe/Si superlattice coolers and on Si coolers at the heat sink temperature of 25°C
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Temperature distribution on top of a 40×40 micron square SiGe thin film cooler measured using thermoreflectance imaging. The applied current is ∼400 mA.
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Distribution of (a) Fermi level and (b) electron and phonon temperature inside double heterojunction structures. The dimensionless coordinate is normalized to the film thickness. ξh is the electron or phonon mean free path divided by the film thickness, nd the carrier concentration and ϕb the barrier height.
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Anisotropic thermal conductivity of the strained Si/Ge (20 Å /20 Å) superlattice: experimental data were fitted using Chen’s models 6871. Also shown in the figure are comparisons of experimental data experimental data with predictions of Fourier theory based on bulk properties of each layer, and with compositionally equivalent alloy (300K) 65.




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