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TECHNICAL PAPERS

Transient Thermal Bubble Formation on Polysilicon Micro-Resisters

[+] Author and Article Information
Jr-Hung Tsai

Mechanical Engineering Department, University of Michigan, Ann Arbor, MIe-mail: jhtsai@argon.eecs.berkeley.edu

Liwei Lin

Mechanical Engineering Department, University of California at Berkeley, Mechanical Engineering, 1113 Etcheverry Hall, University of California, Berkeley, CA 94720-1740

J. Heat Transfer 124(2), 375-382 (Oct 18, 2001) (8 pages) doi:10.1115/1.1445136 History: Received April 26, 2001; Revised October 18, 2001
Copyright © 2002 by ASME
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References

Figures

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Schematic drawing of the micro boiling experiment
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Schematic diagrams of the polysilicon micro resister: (a) cross-sectional view; (b) top view; and (c) photograph of a fabricated polysilicon micro resister.
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Schematic drawing of the lumped heat transfer model. The electric analogy is drawn on the right.
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Measured wall temperature with respect to time on the polysilicon micro resister of 10 μm wide
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Relative temperature changes for the transient micro bubble formation on the 10 μm wide polysilicon micro resister
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Comparison of bubble nucleation in macro and micro scales: (a) typical wall temperature history in macro scale boiling experiments; and (b) typical wall temperature history in micro scale boiling on a polysilicon micro resister.
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Simulated initial temperatures of the 10 μm wide micro resister by using various F values as compared with experimental measurements
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Simulated results of temperature on polysilicon micro resister of 10 μm wide and silicon substrate versus time under an input current of 28 mA
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Comparison of experimental and simulated wall temperatures before the nucleation of a micro-bubble. The equivalent heat transfer coefficient is found to be 105 W/m2°C
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Bubble size growth rate on a 5 μm micro resister compared with the heat diffusion controlled bubble growth mode
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Schematic drawing of the heat transfer mechanism in bubble growth model
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Comparison between experimental data and simulation on a 10 μm wide of micro-resister under constant electrical current input. The constant of the bubble size growth rate is 50 μm/sec1/2 in each current level.

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