TECHNICAL PAPERS: Natural and Mixed Convection

Coupling of Buoyant Convections in Boron Oxide and a Molten Semiconductor in a Vertical Magnetic Field

[+] Author and Article Information
Martin V. Farrell, Nancy Ma

Department of Mechanical and Aerospace Engineering, North Carolina State University, Campus Box 7910, Raleigh, NC 27695

J. Heat Transfer 124(4), 643-649 (Jul 16, 2002) (7 pages) doi:10.1115/1.1473141 History: Received July 07, 2001; Revised February 28, 2002; Online July 16, 2002
Copyright © 2002 by ASME
Your Session has timed out. Please sign back in to continue.



Grahic Jump Location
Two-dimensional problem with a liquid encapsulant and molten semiconductor with a uniform, steady, vertical magnetic field By⁁ and with coordinates normalized by the distance between the hot and cold vertical walls.
Grahic Jump Location
Interfacial shear stress σxy versus ξ for B=0.2, 0.3, 0.5, and 1 T
Grahic Jump Location
Maximum magnitude of the velocity in the melt versus magnetic field strength for 0.2≤B≤5 T
Grahic Jump Location
Streamlines for B=5 T: (a) ψ(ξ,η), and (b) ψe(ξ,χ)
Grahic Jump Location
Streamlines in the encapsulant ψe(ξ,χ) for B=0.5 T
Grahic Jump Location
Streamlines in the encapsulant ψe(ξ,χ) for B=0.4 T
Grahic Jump Location
Streamlines in the encapsulant ψe(ξ,χ) for B=0.3 T
Grahic Jump Location
Streamlines for B=0.2 T: (a) ψ(ξ,η), and (b) ψe(ξ,χ)




Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In