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TECHNICAL PAPERS: Natural and Mixed Convection

Coupling of Buoyant Convections in Boron Oxide and a Molten Semiconductor in a Vertical Magnetic Field

[+] Author and Article Information
Martin V. Farrell, Nancy Ma

Department of Mechanical and Aerospace Engineering, North Carolina State University, Campus Box 7910, Raleigh, NC 27695

J. Heat Transfer 124(4), 643-649 (Jul 16, 2002) (7 pages) doi:10.1115/1.1473141 History: Received July 07, 2001; Revised February 28, 2002; Online July 16, 2002
Copyright © 2002 by ASME
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References

Hurle, D. T. J., and Series, R. W., 1994, “Use of a Magnetic Field in Melt Growth,” Hanb Cryst Growth, D. T. J. Hurle, ed., Elsevier Science Publishers, 2A , pp. 261–285.
Walker, J. S., 1999, “Models of Melt Motion, Heat Transfer, and Mass Transport During Crystal Growth With Strong Magnetic Fields,” The Role of Magnetic Fields in Crystal Growth, in Prog Cryst Growth Charact Mater, K. W. Benz, ed., Elsevier Science Publishers, 38 , pp. 195–213.
Walker, J. S., and Ma, N., 2002, “Convective Mass Transport During Bulk Growth of Semiconductor Crystals With Steady Magnetic Fields,” Annu Rev Heat Transfer, Chang-Lin Tien, Vishwanath Prasad, and Frank Incropera, eds., Begell House, New York, 12 , pp. 223–263.
Bliss,  D. F., Hilton,  R. M., and Adamski,  J. A., 1993, “MLEK Crystal Growth of Large Diameter (100) Indium Phosphide,” J. Cryst. Growth, 128, pp. 451–456.
Bliss,  D. F., Hilton,  R. M., Bachowski,  S., and Adamski,  J. A., 1991, “MLEK Crystal Growth of (100) Indium Phosphide,” J. Electron. Mater., 20, pp. 967–971.
Morton,  J. L., Ma,  N., Bliss,  D. F., and Bryant,  G. G., 2001, “Diffusion-Controlled Dopant Transport During Magnetically-Stabilized Liquid-Encapsulated Czochralski Growth of Compound Semiconductor Crystals,” ASME J. Fluids Eng., 123, pp. 893–898.
Alchaar,  S., Vasseur,  P., and Bilgen,  E., 1995, “Natural Convection Heat Transfer in a Rectangular Enclosure With a Transverse Magnetic Field,” J. Heat Transfer, 117, pp. 668–673.
Garandet,  J. P., Alboussière,  T., and Moreau,  R., 1992, “Buoyancy Driven Convection in a Rectangular Enclosure With a Transverse Magnetic Field,” Int. J. Heat Mass Transf., 35, pp. 741–748.
Ozoe,  H., and Okada,  K., 1989, “The Effect of the Direction of the External Magnetic Field on the Three-Dimensional Natural Convection in a Cubical Enclosure,” Int. J. Heat Mass Transf., 32, pp. 1939–1954.
Ma,  N., and Walker,  J. S., 1996, “Buoyant Convection During the Growth of Compound Semiconductors by the Liquid-Encapsulated Czochralski Process With an Axial Magnetic Field and With a Non-Axisymmetric Temperature,” ASME J. Fluids Eng., 118, pp. 155–159.
Ma,  N., Walker,  J. S., Bliss,  D. F., and Bryant,  G. G., 1998, “Forced Convection During Liquid Encapsulated Crystal Growth With an Axial Magnetic Field,” ASME J. Fluids Eng., 120, pp. 844–850.
Hjellming,  L. N., and Walker,  J. S., 1987, “Melt Motion in a Czochralski Crystal Puller With an Axial Magnetic Field: Motion Due to Buoyancy and Thermocapillarity,” J. Fluid Mech., 182, pp. 335–368.
Bryant, G. G., Bliss, D. F., Leahy, D., Lancto, R., Ma, N., and Walker, J. S., 1997, “Crystal Growth of Bulk InP From Magnetically Stabilized Melts With a Cusped Field,” IEEE Proceedings of the International Conference on Indium Phosphide and Related Materials, pp. 416–419.
Ma,  N., and Walker,  J. S., 2001, “Inertia and Thermal Convection During Crystal Growth With a Steady Magnetic Field,” J. Thermophys. Heat Transfer, 15, pp. 50–54.

Figures

Grahic Jump Location
Two-dimensional problem with a liquid encapsulant and molten semiconductor with a uniform, steady, vertical magnetic field By⁁ and with coordinates normalized by the distance between the hot and cold vertical walls.
Grahic Jump Location
Interfacial shear stress σxy versus ξ for B=0.2, 0.3, 0.5, and 1 T
Grahic Jump Location
Maximum magnitude of the velocity in the melt versus magnetic field strength for 0.2≤B≤5 T
Grahic Jump Location
Streamlines for B=5 T: (a) ψ(ξ,η), and (b) ψe(ξ,χ)
Grahic Jump Location
Streamlines in the encapsulant ψe(ξ,χ) for B=0.5 T
Grahic Jump Location
Streamlines in the encapsulant ψe(ξ,χ) for B=0.4 T
Grahic Jump Location
Streamlines in the encapsulant ψe(ξ,χ) for B=0.3 T
Grahic Jump Location
Streamlines for B=0.2 T: (a) ψ(ξ,η), and (b) ψe(ξ,χ)

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