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TECHNICAL PAPERS: Heat Transfer in Manufacturing

Thermal Aspects in the Continuous Chemical Vapor Deposition of Silicon

[+] Author and Article Information
Hoseon Yoo

Department of Mechanical Engineering, Soongsil University, Seoul 156-743, Korea

Yogesh Jaluria

Department of Mechanical and Aerospace Engineering, Rutgers, The State University of New Jersey, New Brunswick, NJ 08854

J. Heat Transfer 124(5), 938-946 (Sep 11, 2002) (9 pages) doi:10.1115/1.1482084 History: Received August 17, 2001; Revised March 19, 2002; Online September 11, 2002
Copyright © 2002 by ASME
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References

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Figures

Grahic Jump Location
A typical result of the conjugate heat transfer analysis: heat transport modes for a susceptor segment
Grahic Jump Location
Spatial variations of the film growth rate for different values and combinations of conductance ratio
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Dependence of the stationary deposition efficiency on conductance ratio
Grahic Jump Location
Dependence of the deposition efficiency on the susceptor speed for different values and combinations of conductance ratio
Grahic Jump Location
Dependence of the normalized deposition efficiency on susceptor parameter
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Effect of susceptor parameter on the temperature distribution along the susceptor surface
Grahic Jump Location
Stationary deposition efficiency as a function of heating zone length at four selected values of conductance ratio
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Deposition efficiency as a function of heating zone length at four selected values of susceptor parameter
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Schematic of the present continuous chemical vapor deposition system
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Comparison of the predicted film growth rate with existing experimental data 17 and numerical results 1118
Grahic Jump Location
Effect of the susceptor surface emissivity on the temperature distribution

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