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TECHNICAL PAPERS: Heat Transfer in Manufacturing

Thermal Aspects in the Continuous Chemical Vapor Deposition of Silicon

[+] Author and Article Information
Hoseon Yoo

Department of Mechanical Engineering, Soongsil University, Seoul 156-743, Korea

Yogesh Jaluria

Department of Mechanical and Aerospace Engineering, Rutgers, The State University of New Jersey, New Brunswick, NJ 08854

J. Heat Transfer 124(5), 938-946 (Sep 11, 2002) (9 pages) doi:10.1115/1.1482084 History: Received August 17, 2001; Revised March 19, 2002; Online September 11, 2002
Copyright © 2002 by ASME
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References

Figures

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Schematic of the present continuous chemical vapor deposition system
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Comparison of the predicted film growth rate with existing experimental data 17 and numerical results 1118
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Effect of the susceptor surface emissivity on the temperature distribution
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A typical result of the conjugate heat transfer analysis: heat transport modes for a susceptor segment
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Spatial variations of the film growth rate for different values and combinations of conductance ratio
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Dependence of the stationary deposition efficiency on conductance ratio
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Dependence of the deposition efficiency on the susceptor speed for different values and combinations of conductance ratio
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Dependence of the normalized deposition efficiency on susceptor parameter
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Effect of susceptor parameter on the temperature distribution along the susceptor surface
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Stationary deposition efficiency as a function of heating zone length at four selected values of conductance ratio
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Deposition efficiency as a function of heating zone length at four selected values of susceptor parameter

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