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TECHNICAL PAPERS: Electronic Cooling

Active Thermal Control of Distributed Parameter Systems With Application to Testing of Packaged IC Devices

[+] Author and Article Information
Matthew Sweetland, John H. Lienhard

W. M. Rohsenow Heat and Mass Transfer Laboratory, Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Room 3-162, Cambridge, MA 02139-4307

J. Heat Transfer 125(1), 164-174 (Jan 29, 2003) (11 pages) doi:10.1115/1.1527908 History: Received December 18, 2001; Revised September 09, 2002; Online January 29, 2003
Copyright © 2003 by ASME
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References

Figures

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Typical cross-section of a high power microprocessor device
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Schematic diagram of simplified device for transient analysis. Qc is the magnitude of the control input and α is the phase shift of the control input. Qd is the magnitude of the die power profile.
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Schematic drawing of decomposition for solution to transient temperature profile in integrated heat spreader
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Solution for phase shift and magnitude of control power profile
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Temperature response of IHS to a 10 Hz die power profile with Qd=10 W/cm2. For this system, hc=1200 W/m2 and the IHS is 1.8 mm thick.
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Temperature response of IHS to a 10 Hz die power profile with Qd=10 W/cm2 and a control power profile imposed on the front face
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IHS temperature profile for ideal control of die temperatures
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Temperature profile for die and back-face of IHS for ω=10 Hz, Qd=10 W/cm2 and a tolerance ΔT=4 K
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Calculated die temperature using finite difference model to confirm analytic solution for control input. Target ΔT is 4 K with hc=1200 W/m2K,Rt=0.42 cm2K/W,b=1.8 mm, and Qd=10 W/cm2.
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Die and control powers and die temperature change, θ, for square-wave die power profile
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Die and control powers and die temperature change, θ, for triangle-wave die power profile
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Control power limits for specified die power amplitude, Qd, and die temperature tolerance, ΔT, as a function of nondimensional die power frequency, (bL)2
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Control power limits for specified die power amplitude, Qd, and die temperature tolerance, ΔT, as a function of nondimensional die power frequency, (bL)2
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Effect on control power limits of: (a) interfacial thermal resistance; (b) IHS thickness; and (c) die thickness.
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Transient fin temperature profile for 10 Hz example. Top: temperature variation at base and tip of fin. Bottom: maximum/minimum temperature defect along the length of the fin.
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Lateral conduction into IHS for various hc:Q=cyclic lateral loss into IHS; ΔTb=temperature fluctuation amplitude of IHS at die edge. Insert shows discretization of IHS for numerical solution.

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