0
TECHNICAL PAPERS: Natural and Mixed Convection

Numerical Study of Mixed Convection Flow in an Impinging Jet CVD Reactor for Atmospheric Pressure Deposition of Thin Films

[+] Author and Article Information
S. P. Vanka, Gang Luo, Nick G. Glumac

Department of Mechanical and Industrial Engineering, University of Illinois at Urbana-Champaign, 1206 West Green Street, Urbana, IL 61801

J. Heat Transfer 126(5), 764-775 (Nov 16, 2004) (12 pages) doi:10.1115/1.1795232 History: Received May 21, 2003; Revised January 13, 2004; Online November 16, 2004
Copyright © 2004 by ASME
Your Session has timed out. Please sign back in to continue.

References

Figures

Grahic Jump Location
Schematic of a modified impinging jet CVD reactor
Grahic Jump Location
Finite volume grid used for the calculations
Grahic Jump Location
Temperature distribution on the top wall as a function of radial position for different substrate rotation rates for pressure=0.5 atm, and adiabatic sidewall: (a) inlet flow rate=1 SLM and (b) inlet flow rate=10 SLM
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and vector plot for pressure=0.5 atm, inlet flow rate=1 SLM, Ω=0 rpm, and isothermal sidewall
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and vector plot for pressure=0.5 atm, inlet flow rate=1 SLM, Ω=1007 rpm, and isothermal sidewall
Grahic Jump Location
Growth rates along the wafer for different substrate rotation rates for pressure=0.5 atm, inlet flow rate=1 SLM, and isothermal sidewall
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=0.5 atm, inlet flow rate=10 SLM, Ω=0 rpm, and isothermal sidewall
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=0.5 atm, inlet flow rate=10 SLM, Ω=1007 rpm, and isothermal sidewall
Grahic Jump Location
Growth rates along the wafer for different substrate rotation rates for pressure=0.5 atm, inlet flow rate=10 SLM, and isothermal sidewall
Grahic Jump Location
Growth rates along the wafer for different pressures for inlet flow rate=10 SLM and isothermal sidewall
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=1.0 atm, inlet flow rate=10 SLM, Ω=0 rpm, and isothermal sidewall
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=1.0 atm, inlet flow rate=10 SLM, Ω=1007 rpm, and isothermal sidewall
Grahic Jump Location
Growth rates along the wafer for different substrate rotation rates for pressure=1.0 atm, inlet flow rate=10 SLM, and isothermal sidewall
Grahic Jump Location
Schematic of a prototypical stagnation flow CVD reactor
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=0.01 atm, inlet flow rate=1 SLM, and Ω=0 rpm
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=0.1 atm, inlet flow rate=1 SLM, and Ω=0 rpm
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=0.5 atm, inlet flow rate=10 SLM, and Ω=0 rpm
Grahic Jump Location
Growth rates along the wafer for different cases
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=0.1 atm, inlet flow rate=10 SLM, and Ω=1007 rpm
Grahic Jump Location
Growth rates along the wafer for various substrate rotation rates for pressure=0.1 atm and inlet flow rate=10 SLM

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In