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TECHNICAL PAPERS: Natural and Mixed Convection

Numerical Study of Mixed Convection Flow in an Impinging Jet CVD Reactor for Atmospheric Pressure Deposition of Thin Films

[+] Author and Article Information
S. P. Vanka, Gang Luo, Nick G. Glumac

Department of Mechanical and Industrial Engineering, University of Illinois at Urbana-Champaign, 1206 West Green Street, Urbana, IL 61801

J. Heat Transfer 126(5), 764-775 (Nov 16, 2004) (12 pages) doi:10.1115/1.1795232 History: Received May 21, 2003; Revised January 13, 2004; Online November 16, 2004
Copyright © 2004 by ASME
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References

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Figures

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Schematic of a modified impinging jet CVD reactor
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Finite volume grid used for the calculations
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Temperature distribution on the top wall as a function of radial position for different substrate rotation rates for pressure=0.5 atm, and adiabatic sidewall: (a) inlet flow rate=1 SLM and (b) inlet flow rate=10 SLM
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Streamlines, concentration (left) and temperature (right) contours, and vector plot for pressure=0.5 atm, inlet flow rate=1 SLM, Ω=0 rpm, and isothermal sidewall
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Streamlines, concentration (left) and temperature (right) contours, and vector plot for pressure=0.5 atm, inlet flow rate=1 SLM, Ω=1007 rpm, and isothermal sidewall
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Growth rates along the wafer for different substrate rotation rates for pressure=0.5 atm, inlet flow rate=1 SLM, and isothermal sidewall
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Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=0.5 atm, inlet flow rate=10 SLM, Ω=0 rpm, and isothermal sidewall
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=0.5 atm, inlet flow rate=10 SLM, Ω=1007 rpm, and isothermal sidewall
Grahic Jump Location
Growth rates along the wafer for different substrate rotation rates for pressure=0.5 atm, inlet flow rate=10 SLM, and isothermal sidewall
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Growth rates along the wafer for different pressures for inlet flow rate=10 SLM and isothermal sidewall
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Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=1.0 atm, inlet flow rate=10 SLM, Ω=0 rpm, and isothermal sidewall
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=1.0 atm, inlet flow rate=10 SLM, Ω=1007 rpm, and isothermal sidewall
Grahic Jump Location
Growth rates along the wafer for different substrate rotation rates for pressure=1.0 atm, inlet flow rate=10 SLM, and isothermal sidewall
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Schematic of a prototypical stagnation flow CVD reactor
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Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=0.01 atm, inlet flow rate=1 SLM, and Ω=0 rpm
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Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=0.1 atm, inlet flow rate=1 SLM, and Ω=0 rpm
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Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=0.5 atm, inlet flow rate=10 SLM, and Ω=0 rpm
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Growth rates along the wafer for different cases
Grahic Jump Location
Streamlines, concentration (left) and temperature (right) contours, and velocity vectors for pressure=0.1 atm, inlet flow rate=10 SLM, and Ω=1007 rpm
Grahic Jump Location
Growth rates along the wafer for various substrate rotation rates for pressure=0.1 atm and inlet flow rate=10 SLM

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