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Article

Thermal Transport in Nanostructured Solid-State Cooling Devices

[+] Author and Article Information
Deyu Li

Department of Mechanical Engineering, Vanderbilt University, Nashville, TN 37235 e-mail: deyu.li@vanderbilt.edu

Scott T. Huxtable

Department of Mechanical Engineering, Virginia Tech, Blacksburg, VA 24061

Alexis R. Abramson

Department of Mechanical and Aerospace Engineering, Case Western Reserve University, Cleveland, OH 44106

Arun Majumdar

Department of Mechanical Engineering, University of California, Berkeley, CA 94720Materials Science Division, Lawrence Berkeley National Lab, Berkeley, CA 94720

J. Heat Transfer 127(1), 108-114 (Feb 15, 2005) (7 pages) doi:10.1115/1.1839588 History: Received May 21, 2004; Revised July 31, 2004; Online February 15, 2005
Copyright © 2005 by ASME
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Figures

Grahic Jump Location
Thermoelectric improvements (see Ref. 10). History of thermoelectric figure of merit, ZT, at 300 K. Since the discovery of the thermoelectric properties of Bi2Te3 and similar alloys with Sb and Se in the 1950s, no bulk materials with (ZT)300 K>1 have been discovered. Recent studies in nanostructured thermoelectric materials have led to a dramatic increase in (ZT)300 K. In the figure, RV denotes Venkatasubramanian et al.’s data in Ref. 8 and TH denotes Harman et al.’s data in Ref. 9
Grahic Jump Location
Cross-plane thermal conductivity of Si/SixGe1−x superlattices and a 3.5-μm-thick Si0.9Ge0.1 alloy. The labels on the plot refer to the period thickness (see Refs. 3031). Since thermal conductivity data as a function of temperature for SixGe1−x alloys of arbitrary x is not readily available, all comparisons are made with a Si0.9Ge0.1 alloy. Since the thermal conductivity SixGe1−x alloy changes only marginally for 0.1<x<0.9 this makes for a reasonable comparison
Grahic Jump Location
Cross-plane thermal conductivity of SixGe1−x/SiyGe1−y superlattices and a 3.5-μm-thick Si0.9Ge0.1 alloy. The labels on the plot refer to the period thickness (see Ref. 31)
Grahic Jump Location
Thermal conductivity of single crystalline Si nanowires (see Ref. 42). The solid line in (a) is the best fit from Ref. 43. The low temperature behavior is shown in (b)
Grahic Jump Location
Thermal conductivity of Si/SixGe1−x superlattice nanowires (see Ref. 46). The thermal conductivities of a Si/Si0.3Ge0.7 superlattice film and Si0.9Ge0.1 alloy film are also shown for comparison
Grahic Jump Location
Device performance of a Si/SiGeC thermoelectric cooler (see Ref. 54)

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