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RESEARCH PAPERS: Micro/Nanoscale Heat Transfer

Thermal Transport Due to Phonons in Random Nano-particulate Media in the Multiple and Dependent (Correlated) Elastic Scattering Regime

[+] Author and Article Information
Ravi Prasher

 Intel Corporation, CH5-157, 5000 W. Chandler Blvd., Chandler, AZ 85226ravi.s.prasher@intel.com

J. Heat Transfer 128(7), 627-637 (Jan 04, 2006) (11 pages) doi:10.1115/1.2194036 History: Received April 22, 2005; Revised January 04, 2006

Effects of multiple and dependent or correlated elastic scattering of phonons due to nanoparticles on thermal transport in random nano-particulate media (random phononic crystals) are investigated in this paper under various approximations. Multiple scattering means that the scattered wave from one particle is incident on another particle to be scattered again. Dependent scattering means far-field interference of the scattered waves due to phase difference, which is ignored in the independent scattering regime. Multiple and dependent scattering effects become important when the interparticle distance is comparable to the wavelength of phonons. Results show that multiple scattering primarily affects the velocity and density of states of phonons and dependent scattering primarily affects the mean free path of phonons. Effects of both multiple and dependent scattering increases with increasing volume fraction of nanoparticles. Modification of these parameters affects the equilibrium phonon intensity and the thermal conductivity of phonons.

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Copyright © 2006 by American Society of Mechanical Engineers
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Figures

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Figure 1

Definition of vectors and angles for dependent scattering

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Figure 2

Schematic to show the multiple scattering of waves

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Figure 3

Effect of multiple scattering on phase velocity of phonons for Ge scatterer in Si (ϕ=0.4)

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Figure 4

Effect of multiple scattering on the density of states of phonons for Ge scatterer in Si (ϕ=0.4)

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Figure 5

Effect of volume fraction on phase velocity of phonons in the Rayleigh regime

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Figure 6

Comparison between various approximations for effective attenuation for Si in Ge matrix

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Figure 7

Comparison between various approximations for effective attenuation for Ge in Si matrix

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Figure 8

Independent and dependent scattering regime map

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Figure 9

Effective attenuation for ϕ<0.006 to show that dependent scattering effects are negligible

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