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TECHNICAL BRIEFS

Semiconductor Crystal Growth by the Vertical Bridgman Process With Transverse Rotating Magnetic Fields

[+] Author and Article Information
X. Wang

Department of Mechanical and Aerospace Engineering, North Carolina State University, Campus Box 7910, Raleigh, NC 27695

N. Ma1

Department of Mechanical and Aerospace Engineering, North Carolina State University, Campus Box 7910, Raleigh, NC 27695nancy_ma@ncsu.edu

1

Corresponding author.

J. Heat Transfer 129(2), 241-243 (May 14, 2006) (3 pages) doi:10.1115/1.2352790 History: Received October 25, 2005; Revised May 14, 2006

During the vertical Bridgman process, a single semiconductor crystal is grown by the solidification of an initially molten semiconductor contained in an ampoule. The motion of the electrically conducting molten semiconductor can be controlled with an externally applied magnetic field. This paper treats the flow of a molten semiconductor and the dopant transport during the vertical Bridgman process with a periodic transverse or rotating magnetic field. The frequency of the externally applied magnetic field is sufficiently low that this field penetrates throughout the molten semiconductor. Dopant distributions in the crystal are presented.

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Copyright © 2007 by American Society of Mechanical Engineers
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Figures

Grahic Jump Location
Figure 1

Vertical Bridgman ampoule with a spatially uniform, transverse, rotating magnetic field and with coordinates normalized by the crucible’s inner radius

Grahic Jump Location
Figure 2

Dimensionless, azimuthal electromagnetic body force fθ at initial state for b=1

Grahic Jump Location
Figure 3

Contours of concentration in the crystal Cs(r,z) for B=0.3mT, Ug=23μm∕s, and a=1

Grahic Jump Location
Figure 4

Contours of concentration in the crystal Cs(r,z) for B=3.0mT, Ug=23μm∕s, and a=1

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