TECHNICAL PAPERS: Micro/Nanoscale Heat Transfer

Influence of Phonon Dispersion on Transient Thermal Response of Silicon-on-Insulator Transistors Under Self-Heating Conditions

[+] Author and Article Information
Rodrigo A. Escobar

Departamento de Ingeniería Mecánica y Metalúrgica, Pontificia Universidad Católica de Chile, Vicuña Mackenna 4860, Macul, Santiago, Chilerescobar@ing.puc.cl

Cristina H. Amon1

Raymond Lane Distinguished Professor Mechanical Engineering Department, Carnegie Mellon University, Pittsburgh, PA 15213; Faculty of Applied Science and Engineering, University of Toronto, Toronto, Ontario M5S 1A4, Canadacristina.amon@utoronto.ca


Corresponding author.

J. Heat Transfer 129(7), 790-797 (Sep 19, 2006) (8 pages) doi:10.1115/1.2717243 History: Received December 22, 2005; Revised September 19, 2006

Lattice Boltzmann method (LBM) simulations of phonon transport are performed in one-dimensional (1D) and 2D computational models of a silicon-on-insulator transistor, in order to investigate its transient thermal response under Joule heating conditions, which cause a nonequilibrium region of high temperature known as a hotspot. Predictions from Fourier diffusion are compared to those from a gray LBM based on the Debye assumption, and from a dispersion LBM which incorporates nonlinear dispersion for all phonon branches, including explicit treatment of optical phonons without simplifying assumptions. The simulations cover the effects of hotspot size and heat pulse duration, considering a frequency-dependent heat source term. Results indicate that, for both models, a transition from a Fourier diffusion regime to a ballistic phonon transport regime occurs as the hotspot size is decreased to tens of nanometers. The transition is characterized by the appearance of boundary effects, as well as by the propagation of thermal energy in the form of multiple, superimposed phonon waves. Additionally, hotspot peak temperature levels predicted by the dispersion LBM are found to be higher than those from Fourier diffusion predictions, displaying a nonlinear relation to hotspot size, for a given, fixed, domain size.

Copyright © 2007 by American Society of Mechanical Engineers
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Figure 1

SOI simplified silicon layer modeling: (a) one-dimensional model; and (b) two-dimensional model

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Figure 2

Instantaneous temperature distributions in a model of an SOI device of length L=1000nm (within the diffusive regime)

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Figure 3

Instantaneous temperature distributions in a model of an SOI device of length L=100nm (within the transitional regime)

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Figure 4

Instantaneous temperature distributions in a model of an SOI device of length L=10nm (within the ballistic regime)

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Figure 5

Dimensionless comparison of hotspot peak temperature time history for decreasing hotspot width

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Figure 6

Pulse duration effect on the hotspot peak temperature, for a 30nm hotspot, dispersion LBM

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Figure 7

Time history of temperature for a 30nm hotspot subject to a 50ps heat pulse, comparison between gray and dispersion LBM

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Figure 8

Hotspot peak temperature as function of size, comparison between gray, dispersion, and Fourier diffusion results



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