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Research Papers: Micro/Nanoscale Heat Transfer

Raman Thermometry Measurements and Thermal Simulations for MEMS Bridges at Pressures From 0.05 Torr to 625 Torr

[+] Author and Article Information
Leslie M. Phinney1

Engineering Sciences Center, Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185-0346lmphinn@sandia.gov

Justin R. Serrano, Edward S. Piekos, John R. Torczynski, Michael A. Gallis, Allen D. Gorby

Engineering Sciences Center, Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185-0346

1

Corresponding author.

J. Heat Transfer 132(7), 072402 (Apr 28, 2010) (9 pages) doi:10.1115/1.4000965 History: Received May 18, 2009; Revised December 10, 2009; Published April 28, 2010; Online April 28, 2010

This paper reports on experimental and computational investigations into the thermal performance of microelectromechanical systems (MEMS) as a function of the pressure of the surrounding gas. High spatial resolution Raman thermometry was used to measure the temperature profiles on electrically heated, polycrystalline silicon bridges that are nominally 10μm wide, 2.25μm thick, and either 200μm or 400μm long in nitrogen atmospheres with pressures ranging from 0.05 Torr to 625 Torr (6.67 Pa–83.3 kPa). Finite element modeling of the thermal behavior of the MEMS bridges is performed and compared with the experimental results. Noncontinuum gas effects are incorporated into the continuum finite element model by imposing temperature discontinuities at gas-solid interfaces that are determined from noncontinuum simulations. The results indicate that gas-phase heat transfer is significant for devices of this size at ambient pressures but becomes minimal as the pressure is reduced below 5 Torr. The model and experimental results are in qualitative agreement, and better quantitative agreement requires increased accuracy in the geometrical and material property values.

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Figures

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Figure 1

Optical microscope image of a 10 μm wide ×200 μm long test structure fabricated using the SUMMiT V™ process. The bond pads are 100 μm wide and 300 μm long. Two wires bonded to each bond pad are visible in the image. The connections to the package are outside of the image.

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Figure 2

Schematic of the layout of the vacuum and gas supply system for the experiments

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Figure 3

Close-up of the packaged SUMMiT die inside the Linkam stage. The silicon die in the center of the square printed circuit board piece is 3.6 mm wide×6.3 mm long.

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Figure 4

Schematic of the gas heat-transfer model

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Figure 5

Cross section showing the layers in the bond pad and base of the beam. Layer thicknesses are specified in Table 2.

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Figure 6

Temperature field for a 200 μm long beam at 50 Torr (6.67 kPa) with an initial temperature of 304.15 K and operated at 12.41 mW with unity accommodation (Case 16)

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Figure 7

Comparison of experimental (symbols) and simulation (lines) temperature profiles on 200 μm long beams at 0.05–625 Torr (6.67 Pa–83.3 kPa)

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Figure 8

Comparison of experimental (symbols) and simulation (lines) temperature profiles on 400 μm long beams at 0.05–625 Torr (6.67 Pa–83.3 kPa)

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