0
Technical Briefs

On the Linear Temperature Dependence of Phonon Thermal Boundary Conductance in the Classical Limit

[+] Author and Article Information
John C. Duda

Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904; Sandia National Laboratories, Albuquerque, NM 87185

Pamela M. Norris

Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904

Patrick E. Hopkins

 Sandia National Laboratories, Albuquerque, NM 87185; Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904pehopki@sandia.gov

J. Heat Transfer 133(7), 074501 (Apr 04, 2011) (4 pages) doi:10.1115/1.4003575 History: Received October 11, 2010; Revised January 26, 2011; Published April 04, 2011; Online April 04, 2011

We present a new model for predicting thermal boundary conductance in the classical limit. This model takes a different form than those of the traditionally used mismatch theories in the fact that the temperature dependence of thermal boundary conductance is driven by the phononic scattering mechanisms of the materials comprising the interface as opposed to the heat capacities of those materials. The model developed in this work assumes that a phonon on one side of an interface may not scatter at the interface itself but instead scatter with phonons in the adjacent material via the scattering processes intrinsic in the adjacent material. We find that this model is in good agreement with classical molecular dynamics simulations of phonon transport across a Si/Ge interface.

FIGURES IN THIS ARTICLE
<>
Copyright © 2011 by American Society of Mechanical Engineers
Your Session has timed out. Please sign back in to continue.

References

Figures

Grahic Jump Location
Figure 1

Calculations of Eq. 6 in the classical limit compared with predicted thermal boundary conductance at a Si/Ge interface via classical molecular dynamics simulations (13). The contributions from the various phonon scattering mechanisms are shown, where the Eq. 1 contribution assumes a fraction of phonon scatter at the interface due to the change in material properties and the Eq. 5 contribution assumes that phonons will propagate into side 2 and scatter based on the three-phonon scattering rates of Ge. The dotted lines on either side of the calculations of Eq. 6 indicate the sensitivity of the model to changes in the scattering coefficients taken from Ref. 42.

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In