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Technical Briefs

Effects of Growth Temperature on Carbon Nanotube Array Thermal Interfaces

[+] Author and Article Information
Baratunde A. Cola, Placidus B. Amama, Xianfan Xu

School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907

Timothy S. Fisher

School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907tsfisher@purdue.edu

J. Heat Transfer 130(11), 114503 (Sep 02, 2008) (4 pages) doi:10.1115/1.2969758 History: Received July 06, 2007; Revised June 17, 2008; Published September 02, 2008

Due to their excellent compliance and high thermal conductivity, dry carbon nanotube (CNT) array interfaces are promising candidates to address the thermal management needs of power dense microelectronic components and devices. However, typical CNT growth temperatures (800°C) limit the substrates available for direct CNT synthesis. A microwave plasma chemical vapor deposition and a shielded growth technique were used to synthesize CNT arrays at various temperatures on silicon wafers. Measured growth surface temperatures ranged from 500°Cto800°C. The room-temperature thermal resistances of interfaces created by placing the CNT covered wafers in contact with silver foil (silicon-CNT-silver) were measured using a photoacoustic technique to range from approximately 7mm2°CWto19mm2°CW at moderate pressures. Thermal resistances increased as CNT array growth temperature decreased primarily due to a reduction in the average diameter of CNTs in the arrays.

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Copyright © 2008 by American Society of Mechanical Engineers
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Figures

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Figure 1

Schematic of the sample configuration in the MPCVD chamber (not to scale)

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Figure 2

SEM images of CNT arrays grown from 806°Cto506°C. (a) Vertically oriented CNT array grown at 806°C. (b) Higher magnification image of CNTs grown at 806°C. (c) CNTs grown at 737°C. The inset contains a lower magnification image that illustrates vertically oriented CNTs (scale bar is 5μm). (d) CNTs grown at 707°C. The inset contains a lower magnification image (scale bar is 5μm). (e) CNTs grown at 641°C (inset scale bar is 5μm). (f) CNTs grown at 612°C (inset scale bar is 1μm). (g) CNTs grown at 524°C (inset scale bar is 1μm). (h) CNTs grown at 506°C. The top inset scale bar is 1μm. The bottom inset contains a TEM image of a nanotube grown at 506°C (scale bar is 100nm).

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Figure 3

Total thermal resistance R as a function of pressure for one-sided CNT array interfaces with arrays grown at various temperatures

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