Research Papers: Forced Convection

Simple Models for Laminar Thermally Developing Slug Flow in Noncircular Ducts and Channels

[+] Author and Article Information
Y. S. Muzychka

Faculty of Engineering and Applied Science, Memorial University of Newfoundland, St. John’s, NL, A1B 3X5, Canada

Edmond Walsh, Pat Walsh

Stokes Research Institute, University of Limerick, Castletroy, Co. Limerick, Ireland

J. Heat Transfer 132(11), 111702 (Aug 13, 2010) (10 pages) doi:10.1115/1.4002095 History: Received September 20, 2009; Revised June 14, 2010; Published August 13, 2010; Online August 13, 2010

Solutions to the classical Graetz slug flow problem (uniform velocity distribution) in noncircular ducts are examined. These solutions have applications where a constant uniform velocity distribution exists across a channel or duct. These are most often realized in the laminar flow of low Prandtl number liquids, such as liquid metals, and low Reynolds number flows through porous media. Expressions are developed for a number of applications using the asymptotic correlation method of Churchill and Usagi. These expressions vary depending on the definition used for the dimensionless heat transfer coefficient, in the case of constant wall temperature boundary condition (T), and the dimensionless wall temperature for the constant flux boundary conditions (H) and (H1). Finally, simple expressions are developed for predicting the thermal entrance length and fully developed flow Nu values for noncircular ducts.

Copyright © 2010 by American Society of Mechanical Engineers
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Grahic Jump Location
Figure 1

(a) Graetz slug flow in an arbitrary shaped channel or duct and (b) corresponding thermal boundary layer development

Grahic Jump Location
Figure 2

Useful channel and duct shapes

Grahic Jump Location
Figure 3

q⋆ for the rectangular channel, Eq. 107, for ϵ=0,0.2,0.4,0.6,0.8,1

Grahic Jump Location
Figure 4

Nu¯Dh for the rectangular channel, Eq. 106, for ϵ=0,0.2,0.4,0.6,0.8,1

Grahic Jump Location
Figure 5

Microchannels produced in etching processes in Silicon wafers




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