Technical Briefs

Modeling of Polarization-Specific Phonon Transmission Through Interfaces

[+] Author and Article Information
Zhen Huang, Jayathi Y. Murthy, Timothy S. Fisher

 School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907tsfisher@purdue.edu

J. Heat Transfer 133(11), 114502 (Sep 20, 2011) (3 pages) doi:10.1115/1.4004400 History: Received December 21, 2010; Revised June 03, 2011; Accepted June 10, 2011; Published September 20, 2011; Online September 20, 2011

In this work, the atomistic Green’s function method is extended to compute transmission functions for each phonon polarization. The eigenvectors and eigenvalues of the overall density of states matrices are manipulated to yield a density of states matrix for each polarization. A decomposed self-energy is calculated from the density of states matrix for each polarization and used to calculate the transmission function for a particular phonon branch. In a pure bulk material such as silicon, each transmission function exhibits a frequency-independent value of unity. In heterogeneous bulk materials, the transmission function is reduced significantly due to the junction of dissimilar materials.

Copyright © 2011 by American Society of Mechanical Engineers
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Figure 1

Schematic of system

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Figure 2

(a) Polarization-specific transmission function for pure silicon bulk crystal; (b) transmission computing using traditional AGF method compared to that obtained by summation of polarization-specific transmission functions

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Figure 3

Polarization-specific transmission function for Si/Ge/Si structure

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Figure 4

Polarization-specific transmission for Si/Ge/Si structure for kx /kx,max  = ky /ky,max  = 0.05




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