Radiative Heat Transfer

Near-Field Radiative Transfer Between Heavily Doped SiGe at Elevated Temperatures

[+] Author and Article Information
Z. M. Zhang1

George W. Woodruff School of Mechanical Engineering,  Georgia Institute of Technology, Atlanta, GA 30332zhuomin.zhang@me.gatech.edu

E. T. Enikov

Department of Aerospace and Mechanical Engineering,  University of Arizona, Tucson, AZ 85721

T. Makansi

Tempronics, Inc., Tucson, AZ 85750


Corresponding author.

J. Heat Transfer 134(9), 092702 (Jul 09, 2012) (7 pages) doi:10.1115/1.4006168 History: Received July 28, 2011; Revised January 23, 2012; Published July 09, 2012; Online July 09, 2012

SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric function model is formulated based on the previously reported room-temperature mobility and temperature-dependent electric resistivity of several silicon-rich alloys with different doping type and concentration. Fluctuational electrodynamics is used to evaluate the near-field noncontact heat transfer coefficient. The variation of the heat transfer coefficient with doping concentration and temperature is explained according to the change in the optical constants and in the spectral distribution of the near-field heat flux.

Copyright © 2012 by American Society of Mechanical Engineers
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Figure 1

Temperature-dependent scattering rate for (a) p-type and (b) n-type SiGe alloys

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Figure 2

Calculated optical constants at 300 K for the six specimens listed in Table 1

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Figure 3

Room-temperature heat transfer coefficient due to near-field thermal radiation

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Figure 4

Room-temperature spectral heat flux for three n-type specimens at d = 10 nm

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Figure 5

Temperature dependence of optical constants for two p-type specimens SP01 and SP03 at 300 K, 600 K, and 1000 K

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Figure 6

Effect of temperature on near-field heat transfer coefficient for three p-type SiGe specimens. Here, T1 is 1 K higher than T2 , which is given as the indicated temperature.

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Figure 7

Spectral heat flux of the three p-type SiGe specimens at different temperatures, where ΔT=T1-T2




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