0
Research Papers: Evaporation, Boiling, and Condensation

Microscale Temperature Measurements Near the Triple Line of an Evaporating Thin Liquid Film

[+] Author and Article Information
Hemanth K. Dhavaleswarapu, Jayathi Y. Murthy

Cooling Technologies Research Center, School of Mechanical Engineering, and Birck Nanotechnology Center, Purdue University, 585 Purdue Mall, West Lafayette, IN 47907-2088

Suresh V. Garimella1

Cooling Technologies Research Center, School of Mechanical Engineering, and Birck Nanotechnology Center, Purdue University, 585 Purdue Mall, West Lafayette, IN 47907-2088sureshg@purdue.edu

1

Corresponding author.

J. Heat Transfer 131(6), 061501 (Apr 02, 2009) (7 pages) doi:10.1115/1.3090525 History: Received May 11, 2008; Revised January 26, 2009; Published April 02, 2009

Thin-film evaporation from a meniscus in a confined space, which is the basis for many two-phase cooling devices, is experimentally investigated. The meniscus formed by heptane, a highly wetting liquid, on a heated fused quartz wafer is studied. Microscale infrared temperature measurements performed near the thin-film region of the evaporating meniscus reveal the temperature suppression caused by the intensive evaporation in this region. The high spatial resolution (6.3μm) and high temperature sensitivity (20mK) of the infrared camera allow for improved accuracy in the measurements. The effects of evaporation rate, applied heat flux, and channel width on the thin-film heat transfer distribution are also explored.

FIGURES IN THIS ARTICLE
<>
Copyright © 2009 by American Society of Mechanical Engineers
Your Session has timed out. Please sign back in to continue.

References

Figures

Grahic Jump Location
Figure 1

Schematic diagram of the test setup in side view

Grahic Jump Location
Figure 2

Transmissivity of an 80 μm thick heptane layer

Grahic Jump Location
Figure 3

(a) Image of heptane meniscus on fused quartz wafer (qs″=950 W/m2, Ψ=8.35×10−7 kg/s). (b) Infrared image of wafer top (Ttop) near the contact line. (c) Infrared image of the titanium layer on the underside of the wafer near the contact line (Tbottom).

Grahic Jump Location
Figure 4

Two-dimensional meniscus images at a heat flux of 990 W/m2 and different evaporation rates: (a) 8.35×10−7 kg/s, (b) 8.8×10−7 kg/s, and (c) 9.35×10−7 kg/s

Grahic Jump Location
Figure 5

Two-dimensional meniscus images at an evaporation rate of 8.35×10−7 kg/s and different heat fluxes: (a) 810 W/m2, (b) 950 W/m2, (c) 990 W/m2, (d) 1030 W/m2, and (e) 1190 W/m2

Grahic Jump Location
Figure 6

Two-dimensional meniscus images at an evaporation rate of 9.35×10−7 kg/s and a heat flux of 820 W/m2 in different channel widths: (a) 500 μm and (b) 600 μm

Grahic Jump Location
Figure 7

Infrared temperature maps of Ttop and Tbottom at a heat flux of 1190 W/m2 and different evaporation rates: (a) 8.35×10−7 kg/s, (b) 8.8×10−7 kg/s, and (c) 9.35×10−7 kg/s

Grahic Jump Location
Figure 8

Infrared temperature maps of Ttop and Tbottom at an evaporation rate of 8.35×10−7 kg/s and different heat fluxes: (a) 1030 W/m2, (b) 950 W/m2, and (c) 810 W/m2

Grahic Jump Location
Figure 9

The heat balance over a control volume of extent δr in the wafer

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In