0
Research Papers: Micro/Nanoscale Heat Transfer

Electron-Phonon Interaction Model and Its Application to Thermal Transport Simulation During Electrostatic Discharge Event in NMOS Transistor

[+] Author and Article Information
Jae Sik Jin

School of Mechanical and Aerospace Engineering, Seoul National University, Seoul 151-744, Korea

Joon Sik Lee1

School of Mechanical and Aerospace Engineering, Seoul National University, Seoul 151-744, Koreajslee123@snu.ac.kr

1

Corresponding author.

J. Heat Transfer 131(9), 092401 (Jun 22, 2009) (9 pages) doi:10.1115/1.3133882 History: Received February 04, 2008; Revised April 09, 2009; Published June 22, 2009

First, the electron-phonon interaction model, which has recently been developed by authors for thermal predictions within the silicon devices in micro/nanoscales, is verified through the comparison with the experimental measurement of average temperature rise in the channel region of a silicon-on-insulator (SOI) transistor. The effect of the silicon layer thickness of the SOI transistor on phonon thermal characteristics is also investigated. It is found that the thickness effect on the peak temperature of the optical phonon mode in the hot spot region is negligible due to its very low group velocity. Thus the acoustic phonons in a specific frequency band, which has the highest scattering rate with the optical phonons, experience relatively less reduction in the peak temperature as the silicon layer thickness increases. Second, the electron-phonon interaction model is applied to the transient thermal transport simulation during the electrostatic discharge (ESD) event in an n-type metal-oxide-semiconductor (NMOS) transistor. The evolution of the peak temperature in the hot spot region during the ESD event is simulated and compared with that obtained by the previous full phonon dispersion model, which treats the electron-phonon scattering as a volumetric heat source. The results show that the lower group velocity acoustic phonon modes (i.e., higher frequency) and optical mode of negligible group velocity acquire high energy density from electrons during the ESD event, which might cause the devices melting problem. The heat transfer rates by individual phonon modes are also examined, and it is found that the key parameter to determine the phonon heat transfer rate during the ESD event is the product of the phonon specific heat and the scattering rates with higher energy density phonons in the hot spot region.

FIGURES IN THIS ARTICLE
<>
Copyright © 2009 by American Society of Mechanical Engineers
Your Session has timed out. Please sign back in to continue.

References

Figures

Grahic Jump Location
Figure 1

Three-dimensional view of the ellipsoidal conduction band valleys of silicon within the first Brillouin zone in the momentum space with denoting intervalley (f- and g-processes) and intravalley scatterings

Grahic Jump Location
Figure 2

(a) Phonon wavenumbers related to electron–phonon interaction (TO: transverse optical mode, LO: longitudinal optical mode, LA: longitudinal acoustic mode, and TA: transverse acoustic mode). (b) The participating phonon bands in the electron-phonon interaction.

Grahic Jump Location
Figure 3

Two-dimensional computational domain with experimental conditions of the silicon-on-insulator transistor

Grahic Jump Location
Figure 4

Comparison of the predicted channel temperature of the SOI transistor with experimental data for various silicon layer thicknesses

Grahic Jump Location
Figure 5

Lattice temperature contours obtained by the electron-phonon interaction model for various silicon layer thicknesses at an applied voltage of Va=3 V

Grahic Jump Location
Figure 6

Peak temperature of each phonon band in the hot spot region for various silicon layer thicknesses at an applied voltage of Va=3 V

Grahic Jump Location
Figure 7

Schematic of the ESD thermal simulation domain for the NMOS transistor

Grahic Jump Location
Figure 8

Peak temperature evolution in the hot spot of the NMOS transistor

Grahic Jump Location
Figure 9

Energy density of each phonon mode in the hot spot region of the NMOS transistor

Grahic Jump Location
Figure 10

Heat transfer rate through the boundaries of the NMOS transistor: (a) longitudinal acoustic phonon bands (LA) and (b) transverse acoustic phonon bands (TA)

Grahic Jump Location
Figure 11

The value of the dimensionless parameter θi for each phonon band

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In