Technical Brief

Enhancement of Interfacial Thermal Conductance of SiC by Overlapped Carbon Nanotubes and Intertube Atoms

[+] Author and Article Information
Chengcheng Deng, Xiaoxiang Yu

School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China

Xiaoming Huang

School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China
e-mail: xmhuang@hust.edu.cn

Nuo Yang

State Key Laboratory of Coal Combustion,
Huazhong University of Science and Technology,
Wuhan 430074, China;
Nano Interface Center for Energy (NICE),
School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China
e-mail: nuo@hust.edu.cn

1C. Deng and X. Yu contributed equally to this work.

2Corresponding authors.Presented at the 2016 ASME 5th Micro/Nanoscale Heat & Mass Transfer International Conference. Paper No. MNHMT2016-6325.

Contributed by the Heat Transfer Division of ASME for publication in the JOURNAL OF HEAT TRANSFER. Manuscript received May 30, 2016; final manuscript received January 26, 2017; published online March 1, 2017. Assoc. Editor: Robert D. Tzou.

J. Heat Transfer 139(5), 054504 (Mar 01, 2017) (4 pages) Paper No: HT-16-1324; doi: 10.1115/1.4035998 History: Received May 30, 2016; Revised January 26, 2017

A new way was proposed to enhance the interfacial thermal conductance (ITC) of silicon carbide (SiC) composite through the overlapped carbon nanotubes (CNTs) and intertube atoms. By nonequilibrium molecular dynamics (NEMD) simulations, the dependence of ITC on both the number of intertube atoms and the temperature was studied. It is indicated that the ITC can be significantly enhanced by adding intertube atoms and finally becomes saturated with the increase of the number of intertube atoms. And the mechanism is discussed by analyzing the probability distributions of atomic forces and vibrational density of states (VDOS). This work may provide some guidance on enhancing the ITC of CNT-based composites.

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Grahic Jump Location
Fig. 3

The temperature dependence of interfacial thermal conductance (G) between two CNTs for some typical cases of different N. Monotonic increases are observed as a function of temperature for all the cases.

Grahic Jump Location
Fig. 4

The probability distributions of atomic forces along (a) radial, (b) axial, and (c) tangential directions, and (d) vibrational density of states (VDOS) along radial direction of the atom at the connection of outer CNT (circled one in (d)) for the cases of N = 0 and N = 2

Grahic Jump Location
Fig. 2

The interfacial thermal conductance (G) between two CNTs (GCNTs) and the total thermal conductance (GTotal) of simulation system at room temperature as functions of the number of intertube atoms (N). The interfacial thermal conductance shows a sharp increase from N = 0 to N = 1. Both GCNTs and GTotalconverge gradually with the increase of N. Finally, GCNTs is enhanced by 2 orders of magnitude, and GTotal is enhanced by almost 20 times as well.

Grahic Jump Location
Fig. 1

(a) Longitudinal view of simulation system and (b) and (c) temperature profiles and cross section views of simulation system for the cases of N = 0 and N = 2. N denotes the number of intertube atoms. The overlapped segment of CNTs and the whole parts between SiC are considered as the thermal interfaces of two CNTs and the whole simulation system, respectively.



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