Effect of Temperature Jump on nonequilibrium entropy generation in a MOSFET transistor using DPL model

[+] Author and Article Information
Fraj Echouchene

Laboratory of Electronics and Microelectronics, University of Monastir, Monastir 5019, Tunisia

Hafedh Belmabrouk

Department of Physics, College of Science AlZulfi, Majmaah University, Saudi Arabia

1Corresponding author.

ASME doi:10.1115/1.4037061 History: Received March 12, 2016; Revised May 28, 2017


This paper investigates the effect of temperature-jump boundary condition on nonequilibrium entropy production under the effect of the dual-phase-lag heat conduction model in a two-dimensional sub-100 nm metal-oxide-semiconductor field-effect transistor (MOSFET). The transient Dual-phase lag (DPL) model is solved using finite-element method. Also, the influences of the governing parameters on global entropy generation for the following cases: (I) constant applied temperature and (II) temperature-jump boundary condition are discussed in detail and depicted graphically. The analysis of our results indicates that entropy generation minimization inside a MOSFET can be achieved by using temperature-jump boundary condition and for low values of Knudsen number. A significant reduction of the order of 85% of total entropy production is observed when a temperature-jump boundary condition is adopted.

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