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research-article

Effect of Temperature Jump on nonequilibrium entropy generation in a MOSFET transistor using DPL model

[+] Author and Article Information
Fraj Echouchene

Laboratory of Electronics and Microelectronics, University of Monastir, Monastir 5019, Tunisia
frchouchene@yahoo.fr

Hafedh Belmabrouk

Department of Physics, College of Science AlZulfi, Majmaah University, Saudi Arabia
Hafedh.Belmabrouk@fsm.rnu.tn

1Corresponding author.

ASME doi:10.1115/1.4037061 History: Received March 12, 2016; Revised May 28, 2017

Abstract

This paper investigates the effect of temperature-jump boundary condition on nonequilibrium entropy production under the effect of the dual-phase-lag heat conduction model in a two-dimensional sub-100 nm metal-oxide-semiconductor field-effect transistor (MOSFET). The transient Dual-phase lag (DPL) model is solved using finite-element method. Also, the influences of the governing parameters on global entropy generation for the following cases: (I) constant applied temperature and (II) temperature-jump boundary condition are discussed in detail and depicted graphically. The analysis of our results indicates that entropy generation minimization inside a MOSFET can be achieved by using temperature-jump boundary condition and for low values of Knudsen number. A significant reduction of the order of 85% of total entropy production is observed when a temperature-jump boundary condition is adopted.

Copyright (c) 2017 by ASME
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