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Research Papers: Micro/Nanoscale Heat Transfer

Optimizing the Interfacial Thermal Conductance at Gold–Alkane Junctions From “First Principles”

[+] Author and Article Information
Jingjie Zhang

Department of Electrical and
Computer Engineering,
University of Virginia,
Charlottesville, VA 22904
e-mail: jz9wp@virginia.edu

Carlos A. Polanco

Department of Electrical and
Computer Engineering,
University of Virginia,
Charlottesville, VA 22904
e-mail: cap3fe@virginia.edu

Avik W. Ghosh

Department of Electrical and
Computer Engineering,
Department of Physics University of Virginia,
Charlottesville, VA 22904
e-mail: ag7rq@virginia.edu

Contributed by the Heat Transfer Division of ASME for publication in the JOURNAL OF HEAT TRANSFER. Manuscript received July 6, 2017; final manuscript received April 25, 2018; published online May 25, 2018. Assoc. Editor: Alan McGaughey.

J. Heat Transfer 140(9), 092405 (May 25, 2018) (9 pages) Paper No: HT-17-1399; doi: 10.1115/1.4040144 History: Received July 06, 2017; Revised April 25, 2018

We theoretically explore the influence of end-group chemistry (bond stiffness and mass) on the interfacial thermal conductance at a gold–alkane interface. We accomplish this using the nonequilibrium Green's function (NEGF) coupled with first principle parameters in density functional theory (DFT) within the harmonic approximation. Our results indicate that the interfacial thermal conductance is not a monotonic function of either chemical parameters but instead maximizes at an optimal set of mass and bonding strength. This maximum is a result of the interplay between the overlap in local density of states (LDOS) of the device and that in the contacts, as well as the phonon group velocity. We also demonstrate the intrinsic relationship between the diffusive mismatch model (DMM) and the properties from NEGF, and provide an approach to get DMM from first principles NEGF. By comparing the NEGF-based DMM conductance and range of conductance while altering the mass and bonding strength, we show that DMM provides an upper bound for elastic transport in this dimension-mismatched system. We thus have a prescription to enhance the thermal conductance of systems at low temperatures or at low dimensions where inelastic scattering is considerably suppressed.

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Figures

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Fig. 3

Schematic diagram of left, device, and right regions of the alkane–gold junction in the NEGF simulation

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Fig. 2

(a) Phonon dispersion of Au compared with experimental data (red dots); (b) phonon dispersion of polyethylene compared with experimental data (red dots); (c) the number of modes of Au and polyethylene. The inset figure shows the MT of DMM taking the harmonic mean of modes from each side; (d) the conductance of Au–SAMs junction with NEGF-based DMM.

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Fig. 1

(a) Stacking order of Au slab in (111) direction, the color difference represents the gold atoms in different layers; (b) top view of the gold (111) surface, the black lines highlight the simulation supercell; (c) schematic representation of the systems being considered

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Fig. 4

Tunable range of interfacial thermal conductance by varying the interface parameters compares to DMM conductance and the first principle optimized one

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Fig. 5

The first principle NEGF result of the interfacial thermal conductance for the Au–thiol–alkane junctions and the Au–amine–alkane junctions. (a) The bonding strength of different end groups on different adhesion sites; (b) the corresponding interfacial thermal conductance. The error bars show the range of conductance when the initial tilting angle is varied between 10 deg and 30 deg.

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Fig. 6

The stiffness of the bonding varied with adhesion distance, and the corresponding thermal conductance of Au–SAMs junction

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Fig. 7

Variation of the thermal conductance with directly changing (a) the stiffness of the bonding and (b) the mass of the adhesion species

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Fig. 8

(a) A structural sketch of the simple 3D–1D model; (b) the thermal conductance (in unit (W/K)) map with respect to end-group mass and stiffness of the interfacial bonding in the simple 3D–1D model

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Fig. 9

Density of states of the 3D contact, 1D contact, and the device with different bonding strength (a) and end-group mass (b) as shown in Fig. 8(b) with square symbols and up triangle symbols, respectively. The shadowed areas in (c) and (d) show the averaged ODOS for the 3D and 1D contacts, dictating a DOS window for the DOS of the junctions; (e) and (f) show the corresponding transmission for each set of interfacial parameters.

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