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Research Papers: Heat and Mass Transfer

Ambient Temperature and Self-Heating Scaling Laws for Materials With Temperature-Dependent Thermal Conductivity

[+] Author and Article Information
John Ditri

Lockheed Martin,
Rotary and Mission Systems (RMS),
Moorestown, NJ 08057
e-mail: john.ditri@lmco.com

Contributed by the Heat Transfer Division of ASME for publication in the JOURNAL OF HEAT TRANSFER. Manuscript received January 23, 2018; final manuscript received April 19, 2018; published online June 8, 2018. Assoc. Editor: George S. Dulikravich.

J. Heat Transfer 140(10), 102006 (Jun 08, 2018) (7 pages) Paper No: HT-18-1044; doi: 10.1115/1.4040151 History: Received January 23, 2018; Revised April 19, 2018

Two of the primary variables affecting junction temperature of semiconductor devices are the self-heating due to internal power dissipation within the device and the device's base (or ambient) temperature. For materials with temperature-independent material properties, the junction temperature is a linear function of these two variables, which allows for simple “scaling” of the junction temperature for arbitrary dissipation and/or base temperatures. In materials with temperature-dependent material properties, however, the relationship between junction temperature and either variable is nonlinear. The scaling law between junction temperature and dissipated power and base temperature for materials with temperature-dependent material properties are developed in this work. This scaling law allows for fast computation of junction temperature for any values of power dissipation and/or base temperature given the junction temperature for one specific instance of power dissipation and base temperature and hence may find applicability in fast electrothermal solvers.

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Figures

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Fig. 1

Comparison of nonlinear finite element results with nonlinear scaling law for MMIC on shim

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Fig. 2

Die subjected to a heat flux on its upper surface and a fixed temperature at its base. All lateral boundaries are assumed adiabatic.

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Fig. 3

Thermal conductivity versus temperature used in finite element simulations. K0= 350 W/m K, α=1.89 and Tref= 300 K.

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Fig. 4

Comparison of nonlinear finite element results with linear and nonlinear scaling law

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Fig. 5

FEA model of a realistic multistage HEMT amplifier

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Fig. 6

Comparison of nonlinear finite element MMIC model results with linear and nonlinear scaling law

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Fig. 7

Typical packaging of a MMIC attached to a heat spreader with a solder interface

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