Ambient Temperature and Self-Heating Scaling Laws for Materials with Temperature Dependent Thermal Conductivity

[+] Author and Article Information
John Ditri

Lockheed Martin, Rotary and Mission Systems (RMS), Moorestown, New Jersey, 08057

1Corresponding author.

ASME doi:10.1115/1.4040151 History: Received January 23, 2018; Revised April 19, 2018


Two of the primary variables affecting junction temperature of semiconductor devices are the self heating due to internal power dissipation within the device and the device's base (or ambient) temperature. For materials with temperature independent material properties, the junction temperature is a linear function these two variables, which allows for simple "scaling" of the junction temperature for arbitrary dissipation and/or base temperatures. In materials with temperature dependent material properties, however, the relationship between junction temperature and either variable is non-linear. The scaling law between junction temperature and dissipated power and base temperature for materials with temperature dependent material properties are developed in this work. This scaling law allows for fast computation of junction temperature for any values of power dissipation and/or base temperature given the junction temperature for one specific instance of power dissipation and base temperature and hence may find applicability in fast electrothermal solvers.

Copyright (c) 2018 by ASME
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