A Thermal Instability in the Laser-Driven Melting and Recrystallization of Thin Silicon Films on Glass Substrates

[+] Author and Article Information
C. P. Grigoropoulos, R. H. Buckholz

Columbia University, Department of Mechanical Engineering, New York, NY 10027

G. A. Domoto

Xerox, Palo Alto Research Center, Mechanical Engineering Sciences, North Tarrytown, NY 10591

J. Heat Transfer 109(4), 841-847 (Nov 01, 1987) (7 pages) doi:10.1115/1.3248192 History: Received August 20, 1985; Online October 20, 2009


This paper develops a conductive heat transfer stability theory for the laser-driven melting and recrystallization of thin silicon films deposited on conductive (glass) substrates. The important parameters are: laser power, laser intensity distribution, and beam scanning speed. Basic state temperature distributions are obtained for straight phase boundaries. These calculated temperature distributions show the origin of instability. A linear perturbation analysis is used to obtain the leading order corrections to the basic-state temperature fields. The perturbation time rate of growth, as a function of the disturbance wavelength, is then predicted.

Copyright © 1987 by ASME
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