TECHNICAL PAPERS: Heat Transfer in Manufacturing

A Model of Dopant Transport During Bridgman Crystal Growth With Magnetically Damped Buoyant Convection

[+] Author and Article Information
N. Ma

Department of Mechanical and Aerospace Engineering and Engineering Mechanics, University of Missouri at Rolla, 1870 Miner Circle, Rolla, MO 65409 e-mail: ma@umr.edu

J. S. Walker

Department of Mechanical Engineering, and Industrial Engineering, University of Illinois at Urbana-Champaign, 1206 West Green Street, Urbana, IL 61801 e-mail: jswalker@uiuc.edu

J. Heat Transfer 122(1), 159-164 (Aug 10, 1999) (6 pages) doi:10.1115/1.521446 History: Received November 11, 1998; Revised August 10, 1999
Copyright © 2000 by ASME
Your Session has timed out. Please sign back in to continue.


Chedzey,  H. A., and Hurle,  D. T. J., 1966, “Avoidance of Growth-Striae in Semiconductor and Metal Crystals Grown by Zone-Melting Techniques,” Nature (London), 210, pp. 933–934.
Utech,  H. P., and Flemings,  M. C., 1966, “Elimination of Solute Banding in Indium Antimonide Crystals by Growth in a Magnetic Field,” J. Appl. Phys., 7, pp. 2021–2024.
Kim,  D. H., Adornato,  P. M., and Brown,  R. A., 1988, “Effect of Vertical Magnetic Field on Convection and Segregation in Vertical Bridgman Crystal Growth,” J. Cryst. Growth, 89, pp. 339–356.
Ma, N., and Walker, J. S., 1997, “Magnetic Damping of Melt Motions During Bridgman Crystal Growth in Microgravity,” SPIE International Symposium on Optical Science, Engineering and Instrumentation: Materials Research in Low Gravity, Vol. 3123, San Diego, CA, pp. 254–261.
Ma, N., and Walker, J. S., 1999, “Segregation During Bridgman Crystal Growth in Space With an Axial Magnetic Field,” Proceedings of the International Colloquium: Modelling of Material Processing, Riga, Latvia, pp. 12–16.
Ma,  N., and Walker,  J. S., 1997, “Validation of Strong Magnetic Field Asymptotic Models for Dopant Transport During Semiconductor Crystal Growth,” J. Cryst. Growth, 180, pp. 401–409.
Kaiser,  Th., and Benz,  K. W., 1998, “Floating-Zone Growth of Silicon in Magnetic Fields. Part III. Numerical Solution,” J. Cryst. Growth, 183, pp. 564–572.
Ma,  N., and Walker,  J. S., 1997, “Dopant Transport During Semiconductor Crystal Growth With Magnetically Damped Buoyant Convection,” J. Cryst. Growth, 172, pp. 124–135.
Hurle, D. T. J., and Series, R. W., 1994, “Use of a Magnetic Field in Melt Growth,” Handbook of Crystal Growth, 2A , pp. 261–285.
Walker, J. S., 1999, “Models of Melt Motion, Heat Transfer and Mass Transport During Crystal Growth With Strong Magnetic Fields,” The Role of Magnetic Fields in Crystal Growth: Progress in Crystal Growth and Characterization of Materials, Vol. 38, K. W. Benz ed., Elsevier, Amsterdam, pp. 185–213.
Alboussière,  T., Neubrand,  A. C., Garandet,  J. P., and Moreau,  R. 1997, “Segregation During Horizontal Bridgman Growth Under an Axial Magnetic Field,” J. Cryst. Growth, 181, pp. 133–144.
Watring, D. A., 1997, “Effects of Static Axial Magnetic Fields on Directional Solidification of HgCdTe (Mercury Cadmium Telluride, Mass Transfer, Microgravity),” Ph.D. dissertation, Massachusetts Institute of Technology, Cambridge, MA.
Hjellming,  L. N., and Walker,  J. S., 1987, “Melt Motion in a Czochralski Puller With an Axial Magnetic Field: Motion due to Buoyancy and Thermocapillarity,” J. Fluid Mech., 182, pp. 335–368.
Ma,  N., and Walker,  J. S., 1996, “Magnetic Damping of Buoyant Convection During Semiconductor Crystal Growth in Microgravity. Continuous Random g-Jitters,” Phys. Fluids, 8, pp. 944–953.
Adornato,  P. M., and Brown,  R. A., 1987, “Convection and Segregation in Directional Solidification of Dilute and Non-Dilute Binary Alloys: Effects of Ampoule and Furnace Design,” J. Cryst. Growth, 80, pp. 155–190.
Ramachandran, N., and Watring, D. A., 1997, “Convection Damping by an Axial Magnetic Field During the Growth of HgCdTe by Vertical Bridgman Method—Thermal Effects,” 35th AIAA Aerospace Sciences Meeting and Exhibit, Paper No. 97-0450.
Moreau, R., 1990, Magnetohydrodynamics, Kluwer, Boston.


Grahic Jump Location
Vertical Bridgman ampoule with a uniform, steady, axial magnetic field Boz⁁ and with coordinates normalized by the ampoule’s inner radius
Grahic Jump Location
Dimensionless isotherms for Bi=10,b=5, and d=0.5
Grahic Jump Location
Flow subregions of the melt for Ha≫1:c=inviscid core,p=parallel layer adjacent to ampoule wall and parallel to the magnetic field, and h=Hartmann layers adjacent to the crystal-melt interface and the top of the ampoule
Grahic Jump Location
Streamlines for the isotherms in Fig. 2 with Bo=2T and b=5
Grahic Jump Location
Melt concentration C(r,Ξ,t) for Bo=2T;(a)t=0.08263,(b)t=8.026
Grahic Jump Location
Crystal concentration Cs(r,z) for Bo=2T
Grahic Jump Location
Axial variation of the crystal composition for the radially averaged concentration for Bo=2T and the well-mixed limit



Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In