TECHNICAL PAPERS: Natural and Mixed Convection

Coupling of Buoyant Convections in Boron Oxide and a Molten Semiconductor in a Vertical Magnetic Field

[+] Author and Article Information
Martin V. Farrell, Nancy Ma

Department of Mechanical and Aerospace Engineering, North Carolina State University, Campus Box 7910, Raleigh, NC 27695

J. Heat Transfer 124(4), 643-649 (Jul 16, 2002) (7 pages) doi:10.1115/1.1473141 History: Received July 07, 2001; Revised February 28, 2002; Online July 16, 2002
Copyright © 2002 by ASME
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Grahic Jump Location
Two-dimensional problem with a liquid encapsulant and molten semiconductor with a uniform, steady, vertical magnetic field By⁁ and with coordinates normalized by the distance between the hot and cold vertical walls.
Grahic Jump Location
Interfacial shear stress σxy versus ξ for B=0.2, 0.3, 0.5, and 1 T
Grahic Jump Location
Maximum magnitude of the velocity in the melt versus magnetic field strength for 0.2≤B≤5 T
Grahic Jump Location
Streamlines for B=5 T: (a) ψ(ξ,η), and (b) ψe(ξ,χ)
Grahic Jump Location
Streamlines in the encapsulant ψe(ξ,χ) for B=0.5 T
Grahic Jump Location
Streamlines in the encapsulant ψe(ξ,χ) for B=0.4 T
Grahic Jump Location
Streamlines in the encapsulant ψe(ξ,χ) for B=0.3 T
Grahic Jump Location
Streamlines for B=0.2 T: (a) ψ(ξ,η), and (b) ψe(ξ,χ)



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