Research Papers: Micro/Nanoscale Heat Transfer

Interpolation Between the Acoustic Mismatch Model and the Diffuse Mismatch Model for the Interface Thermal Conductance: Application to InN/GaN Superlattice

[+] Author and Article Information
M. Kazan

Department of Physics,  American University of Beirut, P.O. Box 11-0236, Riad El-Solh 1107 2020, Beirut, Lebanonmichel.kazan@aub.edu.lb

J. Heat Transfer 133(11), 112401 (Sep 16, 2011) (7 pages) doi:10.1115/1.4004341 History: Received October 29, 2010; Revised May 24, 2011; Published September 16, 2011; Online September 16, 2011

A model for the thermal conductance of an interface is developed. It interpolates between the widely used acoustic mismatch model and diffuse mismatch model and accounts for the phonon dispersion curves of the materials in contact as calculated from first principles technique. In the present model, the interface morphology is modeled by assuming for the height a Gaussian probability density and a two-dimensional tangential autocorrelation function. The temperature as well as the interface conditions weight the probabilities for the diffuse scattering and the specular behavior of the phonon at the interface. The features of the developed expression for the transmission probability are found to be in excellent agreement with experimental results. The model is applied to predict the phonon events at the interfaces in the InN/GaN superlattice as functions of interface conditions. The results showed that in order to increase the thermal conductance of the InN/GaN superlattice one should decrease the interfaces’ tangential correlation and/or the interfaces’ root mean square roughness. The proposed model can be an efficient tool for engineering high thermal conductivity optoelectronic systems or efficient thermoelectric devices.

Copyright © 2011 by American Society of Mechanical Engineers
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Grahic Jump Location
Figure 1

(a) Phonon dispersion curves of Wurtzite InN and Wurtzite GaN. (b) Phonon density of states in Wurtzite InN and Wurtzite GaN.

Grahic Jump Location
Figure 2

Thermal conductance of the interfaces InN/GaN and GaN/InN as functions of temperature and root mean square roughness at the interface. Calculations are performed for the cases of perfectly correlated and uncorrelated interfaces. The notation InN/GaN refers to a phonon transmission from InN toward GaN and the notation GaN/InN refers to a phonon transmission from GaN toward InN.



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