The pressure sensor is one of the major applications of microelectromechanical systems (MEMS). An absolute pressure sensor utilizes anodic bonding to create a vacuum cavity between the silicon diaphragm and glass substrate. The manifold absolute pressure (MAP) sensing elements from a new supplier have exhibited negative voltage shifts after exposure to humidity. A hypothesis has been established that poor anodic bonding causes an angstrom-level gap between the silicon substrate and glass. Once moisture enters the gap in a vapor form and condenses as water droplets, surface tension can induce a piezoresistive stress effect that causes an unacceptable voltage shift. Finite element analyses were performed to simulate the phenomenon and the results correlated well with experimental observations.
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December 2003
Technical Papers
Humidity-Induced Voltage Shift on MEMS Pressure Sensors
Steven Chen,
Steven Chen
Motorola Inc., Deer Park, IL 60010
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Jinbao Jiao
Jinbao Jiao
Motorola Inc., Deer Park, IL 60010
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J. Albert Chiou, Mem. ASME
Steven Chen
Motorola Inc., Deer Park, IL 60010
Jinbao Jiao
Motorola Inc., Deer Park, IL 60010
Contributed by the Electronic and Photonic Packaging Division for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received May 2001; final revision, June 2003. Associate Editor: Y. C. Lee.
J. Electron. Packag. Dec 2003, 125(4): 470-474 (5 pages)
Published Online: December 15, 2003
Article history
Received:
May 1, 2001
Revised:
June 1, 2003
Online:
December 15, 2003
Citation
Chiou, J. A., Chen , S., and Jiao, J. (December 15, 2003). "Humidity-Induced Voltage Shift on MEMS Pressure Sensors ." ASME. J. Electron. Packag. December 2003; 125(4): 470–474. https://doi.org/10.1115/1.1615249
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