We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.
RIE-Texturing of Industrial Multicrystalline Silicon Solar Cells
Contributed by the Solar Energy Division of THE AMERICAN SOCIETY OF MECHANICAL ENGINEERS for publication in the ASME JOURNAL OF SOLAR ENERGY ENGINEERING. Manuscript received by the ASME Solar Division September 2003; final revision March 2004. Associate Editor: A. Walker.
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Ruby, D. S., Zaidi, S., Narayanan, S., Yamanaka, S., and Balanga, R. (February 7, 2005). "RIE-Texturing of Industrial Multicrystalline Silicon Solar Cells ." ASME. J. Sol. Energy Eng. February 2005; 127(1): 146–149. https://doi.org/10.1115/1.1756926
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